JPS605683A - 高解像度高感度ソリツドステ−トイメ−ジセンサ - Google Patents

高解像度高感度ソリツドステ−トイメ−ジセンサ

Info

Publication number
JPS605683A
JPS605683A JP59110853A JP11085384A JPS605683A JP S605683 A JPS605683 A JP S605683A JP 59110853 A JP59110853 A JP 59110853A JP 11085384 A JP11085384 A JP 11085384A JP S605683 A JPS605683 A JP S605683A
Authority
JP
Japan
Prior art keywords
electrode
electrodes
image sensor
state image
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59110853A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0431231B2 (en]
Inventor
Seiji Ochi
大地　成治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of JPS605683A publication Critical patent/JPS605683A/ja
Publication of JPH0431231B2 publication Critical patent/JPH0431231B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP59110853A 1983-06-06 1984-06-01 高解像度高感度ソリツドステ−トイメ−ジセンサ Granted JPS605683A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/501,332 US4558365A (en) 1983-06-06 1983-06-06 High-resolution high-sensitivity solid-state imaging sensor
US501332 2000-02-09

Publications (2)

Publication Number Publication Date
JPS605683A true JPS605683A (ja) 1985-01-12
JPH0431231B2 JPH0431231B2 (en]) 1992-05-25

Family

ID=23993101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59110853A Granted JPS605683A (ja) 1983-06-06 1984-06-01 高解像度高感度ソリツドステ−トイメ−ジセンサ

Country Status (2)

Country Link
US (1) US4558365A (en])
JP (1) JPS605683A (en])

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194980A (ja) * 1985-02-22 1986-08-29 Canon Inc 撮像素子及び撮像装置
JPS62162270U (en]) * 1986-04-03 1987-10-15
JPS63120115A (ja) * 1986-11-07 1988-05-24 Toray Ind Inc 熱処理装置
US4870495A (en) * 1985-02-22 1989-09-26 Canon Kabushiki Kaisha Image sensing element and image sensing apparatus for recording a still image
JP2005005573A (ja) * 2003-06-13 2005-01-06 Fujitsu Ltd 撮像装置

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123059A (ja) * 1983-12-08 1985-07-01 Toshiba Corp 密着型カラ−イメ−ジセンサ
JPS6152061A (ja) * 1984-08-22 1986-03-14 Toshiba Corp 密着型カラ−イメ−ジセンサ
US4641193A (en) * 1984-12-07 1987-02-03 New York Institute Of Technology Video display apparatus and method
US5381013A (en) * 1985-12-11 1995-01-10 General Imaging Corporation X-ray imaging system and solid state detector therefor
US5464984A (en) * 1985-12-11 1995-11-07 General Imaging Corporation X-ray imaging system and solid state detector therefor
US4959736A (en) * 1987-12-29 1990-09-25 Minolta Camera Kabushiki Kaisha Image signal processing method and apparatus with elongated picture elements
US4994907A (en) * 1989-08-28 1991-02-19 Eastman Kodak Company Color sensing CCD with staggered photosites
US5274476A (en) * 1991-08-14 1993-12-28 Gold Star Electron Co., Ltd. CCD image sensor with photodiodes in a zig-zag pattern and particular transfer gate electrodes formed over channel stop regions and VCCD regions
JP3830590B2 (ja) * 1996-10-30 2006-10-04 株式会社東芝 固体撮像装置
EP1013076B1 (de) 1997-09-12 2001-02-28 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Bildsensorelemente
US6166831A (en) * 1997-12-15 2000-12-26 Analog Devices, Inc. Spatially offset, row interpolated image sensor
JP4018820B2 (ja) * 1998-10-12 2007-12-05 富士フイルム株式会社 固体撮像装置および信号読出し方法
US6252218B1 (en) * 1999-02-02 2001-06-26 Agilent Technologies, Inc Amorphous silicon active pixel sensor with rectangular readout layer in a hexagonal grid layout
US6822682B1 (en) * 1999-08-18 2004-11-23 Fuji Photo Film Co., Ltd. Solid state image pickup device and its read method
JP4092409B2 (ja) * 1999-08-18 2008-05-28 富士フイルム株式会社 固体撮像素子
JP3967500B2 (ja) * 1999-09-08 2007-08-29 富士フイルム株式会社 固体撮像装置および信号読出し方法
JP2001203969A (ja) * 2000-01-21 2001-07-27 Fuji Photo Film Co Ltd 撮像装置およびその動作制御方法
KR100369359B1 (ko) * 2000-12-30 2003-01-30 주식회사 하이닉스반도체 이웃하는 픽셀 간의 칼라 데이터 분리할 수 있는 이미지센서 및 그를 위한 데이터 스캔 방법
US7105876B1 (en) 2001-02-23 2006-09-12 Dalsa, Inc. Reticulated gate CCD pixel with diagonal strapping
US8120690B2 (en) * 2001-04-12 2012-02-21 Nikon Corporation Imaging device
JP4094364B2 (ja) * 2002-07-19 2008-06-04 富士フイルム株式会社 固体撮像装置およびその測光方法
JP4034614B2 (ja) * 2002-08-06 2008-01-16 富士フイルム株式会社 固体撮像装置
JP4495949B2 (ja) * 2003-11-14 2010-07-07 富士フイルム株式会社 ２板式カラー固体撮像装置及びデジタルカメラ
US20050185077A1 (en) * 2004-02-23 2005-08-25 Jps Group Holdings, Ltd. Cmos image sensor with 1.25 - 1.5 transistor/pixel ratio
CN100446547C (zh) * 2005-03-07 2008-12-24 富士胶片株式会社 具有扩大面积的光电管的固态图像传感器
US7768569B2 (en) * 2006-08-17 2010-08-03 Altasens, Inc. High sensitivity color filter array
US8237832B2 (en) 2008-05-30 2012-08-07 Omnivision Technologies, Inc. Image sensor with focusing interconnections
US8436909B2 (en) 2008-10-21 2013-05-07 Stmicroelectronics S.R.L. Compound camera sensor and related method of processing digital images
JP6033270B2 (ja) * 2014-10-30 2016-11-30 三菱電機株式会社 磁気式位置検出装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5937629B2 (ja) * 1975-01-30 1984-09-11 ソニー株式会社 固体撮像体
US4200892A (en) * 1978-03-27 1980-04-29 Rca Corporation Solid state image sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194980A (ja) * 1985-02-22 1986-08-29 Canon Inc 撮像素子及び撮像装置
US4870495A (en) * 1985-02-22 1989-09-26 Canon Kabushiki Kaisha Image sensing element and image sensing apparatus for recording a still image
JPS62162270U (en]) * 1986-04-03 1987-10-15
JPS63120115A (ja) * 1986-11-07 1988-05-24 Toray Ind Inc 熱処理装置
JP2005005573A (ja) * 2003-06-13 2005-01-06 Fujitsu Ltd 撮像装置

Also Published As

Publication number Publication date
JPH0431231B2 (en]) 1992-05-25
US4558365A (en) 1985-12-10

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